LS5911 TO-78 6L ROHS

LS5911 LS5912 LS5912C IMPROVED LOW NOISE WIDEBAND MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES Improved Replacement for SILICONIX, FAIRCHILD, & NATIONAL: 2N5911 & 2N5912 LOW NOISE (10kHz) en ~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) SOT-23 TOP VIEW SOT-23 TOP VIEW G1 D1 S1 gfs ≥ 4000µS ABSOLUTE MAXIMUM RATINGS1 1 6 2 5 3 4 S2 D2 G2 @ 25 °C (unless otherwise stated) TOP VIEW Maximum Temperatures Storage Temperature Operating Junction Temperature PDIP-B PDIP-A -55 to +150 °C S1 1 8 G2 S1 1 8 NC -55 to +150 °C D1 2 7 SS D1 2 7 G2 SS 3 6 D2 G1 3 6 D2 G1 4 5 S2 NC 4 5 S2 S1 1 8 G2 S1 1 8 NC D1 2 7 SS D1 2 7 G2 SS 3 6 D2 G1 3 6 D2 G1 4 5 S2 NC 4 5 S2 Maximum Power Dissipation Continuous Power Dissipation (Total)4 500mW SOIC-A Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V SOIC-B MATCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC VGS1 − VGS2 Differential Gate to Source Cutoff Voltage Differential Gate to Source Voltage Change with Temperature Saturation Drain Current Ratio Δ VGS1 − VGS2 ΔT IDSS1 IDSS2 IG1 − IG2 gfs1 gfs2 CMRR TYP LS5911 MIN MAX 0.95 Differential Gate Current MIN 0.95 85 MAX LS5912C MIN MAX UNIT CONDITIONS 10 15 40 mV VDG = 10V, ID = 5mA 20 40 40 µV/°C VDG = 10V, ID = 5mA TA = -55 to +125°C 1 0.95 20 Forward Transconductance Ratio Common Mode Rejection Ratio LS5912 1 1 0.95 20 0.95 1 1 20 0.95 nA VDS = 10V, VGS = 0V Notes 2, 3 VDG = 10V, ID = 5mA TA = +125°C VDS = 10V, ID = 5mA f = 1kHz3 1 dB VDG = 5V to 10V ID = 5mA STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) LS5911 LS5912 LS5912C SYM. CHARACTERISTIC TYP UNIT CONDITIONS MIN MAX MIN MAX MIN MAX BVGSS Gate to Source Breakdown -25 -25 -25 IG = -1µA, VDS = 0V VGS(off) Voltage Gate to Source Cutoff Voltage -1 -5 -1 -5 -1 -5 VDS = 10V, ID = 1nA V VGS(F) Gate to Source Forward Voltage 0.7 IG = 1mA, VDS = 0V VGS Gate to Source Voltage -0.3 -4 -0.3 -4 -0.3 -4 VDG = 10V, IG = 5mA Drain to Source Saturation IDSS 7 40 7 40 7 40 mA VDS = 10V, VGS = 0V 2 Current IGSS Gate Leakage Current -1 -50 -50 -50 VGS = -15V, VDS = 0V pA IG Gate Operating Current -1 -50 -50 -50 VDG = 10V, ID = 5mA IG1G2 Gate to Gate Isolation Current ±1 ±1 ±1 uA VG1-VG2=±25VID = IS = 0 Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201132 03/03/2020 Rev#A9 ECN# LS5911 LS5912 LS5912C DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP f = 1kHz Forward Transconductance gfs f = 100MHz gos Output Conductance LS5911 MIN Ciss Input Capacitance Crss Reverse Transfer Capacitance NF Noise Figure en Equivalent Input Noise Voltage LS5912 MIN MAX LS5912C MIN MAX UNIT 7000 100 100 100 µS VDG = 10V, ID = 5mA pF VDG = 10V, ID = 5mA f = 1MHz 120 5 5 5 1.2 1.2 1.2 1 1 1 f = 100Hz 7 20 20 20 f = 10kHz 4 10 10 10 VDG = 10V, ID = 5mA f = 10kHz, RG = 100KΩ VDG = 10V, ID = 5mA nV/√Hz f = 100Hz VDG = 10V, ID = 5mA nV/√Hz f = 10kHz dB PDIP SOT-23 0.060 0.95 6 1 1.90 2 5 3 4 0.35 0.50 8 2 7 3 6 4 5 0.100 0.250 0.145 0.170 0.09 0.20 0.00 0.15 1 0.375 0.038 2.80 3.00 1.50 1.75 2.60 3.00 0.90 1.30 CONDITIONS 4000 10000 4000 10000 4000 10000 f = 1kHz f = 100MHz MAX 0.295 0.320 DIMENSIONS IN INCHES SOIC 0.10 0.60 0.014 0.018 DIMENSIONS IN MILLIMETERS PDIP-B PDIP-A S1 1 8 G2 S1 1 8 NC D1 2 7 SS D1 2 7 G2 SS 3 6 D2 G1 3 6 D2 G1 4 5 S2 NC 4 5 S2 SOIC-A SOIC-B S1 1 8 G2 S1 1 8 NC D1 2 7 SS D1 2 7 G2 SS 3 6 D2 G1 3 6 D2 G1 4 5 S2 NC 4 5 S2 Linear Integrated Systems • 0.021 1 8 2 7 3 6 4 5 0.150 0.157 0.0075 0.0098 0.050 0.189 0.196 0.0040 0.0098 0.2284 0.2440 DIMENSIONS IN INCHES Please contact the factory regarding the availability of optional packages. 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201132 03/03/2020 Rev#A9 ECN# LS5911 LS5912 LS5912C NOTES 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator. 4. Derate 4mW/°C above 25°C. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201132 03/03/2020 Rev#A9 ECN# LS5911 LS5912 LS5912C